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PDF BSP030 Data sheet ( Hoja de datos )
| Número de pieza | BSP030 | |
| Descripción | N-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BSP030
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jan 20
File under Discrete Semiconductors, SC07
1997 Mar 13
1 page  
Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
BSP030
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tf
ton
td(off)
tr
toff
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
Source-drain diode
VSD source-drain diode forward voltage
trr reverse recovery time
CONDITIONS
VGS = 0; ID = 10 µA
VGS = VDS; ID = 1 mA
VGS = 0; VDS = 24 V
VGS = ±20 V; VDS = 0
VGS = 4.5 V; ID = 2.5 A
VGS = 10 V; ID = 5 A
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 10 V; VDD = 15 V; ID = 5 A;
Tamb = 25 °C
VGS = 10 V; VDD = 15 V; ID = 5 A;
Tamb = 25 °C
VGS = 10 V; VDD = 15 V; ID = 5 A;
Tamb = 25 °C
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 0 to 10 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGS = 10 to 0 V; VDD = 15 V;
ID = 1 A; RL = 15 Ω; Rgen = 6 Ω
VGD = 0; IS = 1.25 A
IS = 1.25 A; di/dt = −100 A/µs
MIN.
30
1
−
−
−
−
−
−
−
−
TYP. MAX.
−−
− 2.8
− 500
− ±100
− 0.05
− 0.03
750 −
450 −
200 −
28 −
UNIT
V
V
nA
nA
Ω
Ω
pF
pF
pF
nC
− 2.5 −
nC
− 10.5 −
nC
− 14 −
ns
− 18 −
ns
−
32 60
ns
− 29 −
ns
− 33 −
ns
− 62 150 ns
− −1 V
− 70 −
ns
1997 Mar 13
5
5 Page 
Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
NOTES
Product specification
BSP030
1997 Mar 13
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BSP030.PDF ] | |
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