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PDF BSO615NV Data sheet ( Hoja de datos )
| Número de pieza | BSO615NV | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary Data
SIPMOS® Small-Signal-Transistor
Features
Product Summary
• Dual N Channel
• Enhancement mode
• Avalanche rated
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
BSO 615NV
VDS
RDS(on)
ID
60
0.12
3.1
V
Ω
A
Type
Package
BSO 615NV SO 8
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current, one channel active
Pulsed drain current, one channel active
ID
IDpulse
TA = 25 ˚C
Avalanche energy, single pulse
ID = 3.1 A, VDD = 25 V, RGS = 25 Ω
Avalanche current,periodic limited by Tjmax
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAS
IAR
EAR
dv/dt
IS = 3.1 A, VDS = 20 V, di/dt = 200 A/µs,
Tjmax = 150 ˚C
Gate source voltage
Power dissipation, one channel active
TA = 25 ˚C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj
Tstg
Ordering Code
Q67041-S2844
Value
3.1
12.4
Unit
A
60 mJ
3.1 A
0.2 mJ
6 kV/µs
±20
2
-55 ... +150
-55 ... +150
55/150/56
V
W
˚C
Data Sheet
1
05.99
1 page  
BSO 615NV
Power Dissipation
Ptot = f (TA)
Drain current
ID = f (TA)
BSO 615NV
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 ˚C 160
TA
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 ˚C
10 2 BSO 615NV
A
10 1
/ID
= V DS
R DS(on)
tp = 4.6µs
10 µs
100 µs
10 0
1 ms
10 ms
10 -1
10
-2
10
-1
10 0
DC
10 1 V 10 2
VDS
BSO 615NV
3.4
A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 ˚C 160
TA
Transient thermal impedance
ZthJA = f(tp)
parameter : D = tp/T
10 2 BSO 615NV
K/W
10 1
10 0
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s
tp
10 4
Data Sheet
5
05.99
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSO615NV.PDF ] | |
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