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PDF BSO615 Data sheet ( Hoja de datos )
| Número de pieza | BSO615 | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
BSO 615 C
SIPMOS® Small-Signal-Transistor
Features
• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
VDS
RDS(on)
ID
N
60
0.11
3.1
P
-60 V
0.3 Ω
-2 A
Type
BSO 615 C
Package
SO 8
Ordering Code
Q67041-S4024
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
ID = 3.1 A , VDD = 25 V, RGS = 25 Ω
ID = -2 A , VDD = -25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, Tjmax = 150 °C
IS = 3.1 A, VDS = 48 V, di/dt = 200 A/µs
IS = -2 A, VDS = -48 V, di/dt = -200 A/µs
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
NP
3.1
2.5
12.4
-2
-1.6
-8
47 -
- 70
0.2 0.2
6-
-6
±20 ±20
22
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-10-28
1 page  
Power Dissipation (N-Ch.)
Ptot = f (TA)
Preliminary data
BSO 615 C
Power Dissipation (P-Ch.)
Ptot = f (TA)
BSO 615 C
2.2
W
BSO 615 C
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (N-Ch.)
ID = f (TA)
parameter: VGS≥ 10 V
BSO 615 C
3.4
A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (P-Ch.)
ID = f (TA)
parameter: VGS≥ -10 V
BSO 615 C
-2.2
A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
20 40 60 80 100 120 °C 160
TA
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0
20 40 60 80 100 120 °C
160
TA
Page 5
1999-10-28
5 Page 
Preliminary data
BSO 615 C
Avalanche Energy EAS = f (Tj) (N-Ch.)
parameter: ID = 3.1 A , VDD = 25 V
RGS = 25 Ω
50
mJ
40
35
30
Avalanche Energy EAS = f (Tj)
parameter: ID = -2 A , VDD = -25 V
RGS = 25 Ω
80
mJ
60
50
25 40
20
30
15
20
10
10
5
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (N-Ch.)
VGS = f (QGate)
parameter: ID = 3.1 A
BSO 615 C
16
0
25 45 65 85 105 125 °C 165
Tj
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = -2 A
BSO 615 C
-16
VV
12 -12
10 -10
8
6 0,2 VDS max
4
0,8 VDS max
-8
-6 0,2 VDS max
-4
0,8 VDS max
2 -2
0
0 2 4 6 8 10 12 14 16 nC 20
QGate
0
0
2
4
6
8 10 12 14 16 nC 20
QGate
Page 11
1999-10-28
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSO615.PDF ] | |
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