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PDF BSO613SPV Data sheet ( Hoja de datos )
| Número de pieza | BSO613SPV | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
SIPMOS® Small-Signal-Transistor
BSO613SPV
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Type
BSO613SPV
Package
SO 8
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
VDS
RDS(on)
ID
-60
0.13
-3.44
V
W
A
S1
S2
S3
8D
7D
6D
G4
5D
Top View SIS00062
Ordering Code
Q67042-S4021
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
Pulsed drain current
TA = 25 °C
ID
ID puls
Avalanche energy, single pulse
ID = -3.44 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
EAR
Reverse diode dv/dt
dv/dt
IS = -3.44 A, VDS = -48 V, di/dt = 200 A/µs,
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
VGS
Ptot
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Value
-3.44
-13.8
150
0.25
6
±20
2.5
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-11-22
1 page  
Preliminary data
BSO613SPV
Power Dissipation
Ptot = f (TA)
BSO613SPV
2.8
W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
Safe operating area
TA
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 2 BSO613SPV
A
-10 1
-10 0
/ID
= V DS
R DS(on)
tp = 550.0µs
1 ms
10 ms
-10 -1
DC
Drain current
ID = f (TA)
parameter: VGS³ 10 V
BSO613SPV
-3.8
A
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0
20 40 60 80 100 120 °C 160
Transient thermal impedance
TA
ZthJC = f (tp)
parameter : D = tp/T
10 2 BSO613SPV
K/W
10 1
10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-2
-10
-1
-10 0
-10 1
V -10 2
VDS
Page 5
10
-3
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
s 10 3
tp
1999-11-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSO613SPV.PDF ] | |
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