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PDF BSO4410 Data sheet ( Hoja de datos )
| Número de pieza | BSO4410 | |
| Descripción | OptiMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSO4410 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary data
OptiMOS=Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS(on) product (FOM)
150°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching applications
BSO4410
Product Summary
VDS 30 V
RDS(on) 13 m
ID 11.1 A
Type
BSO4410
Package
SO 8
Ordering Code Marking
Q67042-S409464-A 4410
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=11.1 A , VDD=25V, RGS=25
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=11.1A, VDS=24V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
VGS
Ptot
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
11.1
8.9
44.5
126
6
±20
2.5
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-09-06
1 page  
Preliminary data
BSO4410
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
BSO4410
28 Ptot = 2.5W
Ai
24 h g f
22
20
18
16
14
12
VGS [V]
a 2.8
b
e
c
3.0
3.2
d 3.4
e 3.6
f 3.8
g 4.0
d
h 4.5
i 10.0
10
8c
6
4b
2a
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
25
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
42 BSO4410
m d
e
36
32
28 f
24
g
20
16 h
12 i
8
VGS [V] =
4def
3.4 3.6 3.8
ghi
4.0 4.5 10.0
0
0 4 8 12 16 A 24
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
50
S
A
40
35
15 30
25
10 20
15
5 10
5
0
0 0.5 1 1.5 2 2.5 3 VDS 4
V
Page 5
0
0 5 10 15 20 25 30 35 40 A 50
ID
2001-09-06
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSO4410.PDF ] | |
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