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PDF BSO303P Data sheet ( Hoja de datos )
| Número de pieza | BSO303P | |
| Descripción | OptiMOS -P Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSO303P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Preliminary data
BSO303P
OptiMOS-P Small-Signal-Transistor
Feature
• Dual P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
VDS -30 V
RDS(on) 21 mΩ
ID -8.2 A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View SIS00070
Type
BSO303P
Package
SO 8
Ordering Code
Q67042-S4010
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-8.2 A , VDD=-25V, RGS=25Ω
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-8.2A, VDS=-24V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-8.2
-6.6
-32.4
97
-6
±20
2
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-08
1 page  
Preliminary data
BSO303P
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
70
A
60
Vgs = -5V
Vgs = -4.5V
55 Vgs = -6V
Vgs = -7V
50
Vgs = -10V
Vgs = -4V
45
40
35
Vgs = -3.5V
30
25
20
15 Vgs = -3V
10
5 Vgs = -2.5V
0
0 2 4 6 V 10
- VDS
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
35
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0.06
VGS = -3V
Ω
VGS = -3.5V
VGS = -4V
0.04
0.03 VGS = -4.5V
0.02
0.01
0
5
VGS = -5V
VGS = -6V
VGS = -8V
VGS = -10V
10 15 20 25 30 A 40
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
40
A
S
25
20
20
15
10
10
5
0
0 0.5 1 1.5 2 2.5 3 V
4
- VGS
Page 5
0
0 5 10 15 20 25 A 35
- ID
2002-01-08
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSO303P.PDF ] | |
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