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PDF BSO207P Data sheet ( Hoja de datos )
| Número de pieza | BSO207P | |
| Descripción | OptiMOS -P Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
BSO207P
OptiMOS-P Small-Signal-Transistor
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
VDS -20 V
RDS(on) 45 mΩ
ID -5.7 A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View SIS00070
Type
BSO207P
Package
SO 8
Ordering Code
Q67042-S4068
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-5.7 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-5.7A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-5.7
-4.6
-22.8
44
-6
±12
2
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-11-20
1 page  
Preliminary data
BSO207P
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
BSO207P
-14 Ptot = 2W
A
-12
i
h
-11
-10
-9
-8
-7
-6
VGS [V]
a -1.8
gb
-1.9
c -2.0
d -2.1
f e -2.2
f -2.3
g -2.4
eh
-2.5
i -4.5
-5 d
-4
c
-3
-2 b
-1 a
0
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V -5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
35
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
BSO207P
150
mΩ
c
d
ef
g
120
110
100
90
80
70
60
50
40
30
20 VGS [V] =
cdef ghi
10 -2.0 -2.1 -2.2 -2.3 -2.4 -2.5 -4.5
0
0 -2 -4 -6 -8
h
i
-10 A -13
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
35
S
25 25
20 20
15 15
10 10
55
0
0 0.5 1 1.5 2 V
3
- VGS
Page 5
0
0 5 10 15 20 25 A 35
- ID
2001-11-20
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSO207P.PDF ] | |
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