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PDF BSO201SP Data sheet ( Hoja de datos )
| Número de pieza | BSO201SP | |
| Descripción | OptiMOS -P Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Preliminary data
BSO201SP
OptiMOS-P Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
VDS
RDS(on)
ID
-20
8
-14.9
V
mΩ
A
S1
S2
S3
8D
7D
6D
G4
5D
Top View SIS00062
Type
BSO201SP
Package
SO 8
Ordering Code
Q67042-S4071
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-14.9 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
ID puls
EAS
dv/dt
IS=-14.9A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-14.9
-11.9
-59.6
248
-6
±12
2.5
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-12-21
1 page  
Preliminary data
BSO201SP
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
90
A
Vgs = -2.5V
70 Vgs = -3V
Vgs = -4V
60 Vgs = -4.5V
Vgs = -10V
50
Vgs = -2.2V
40
30
20
Vgs = -1.8V
10
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0.05
Ω
0.04
0.035
0.03
0.025
Vgs = - 2.2V
Vgs = - 2.5V
Vgs = - 3V
Vgs = - 4.5V
Vgs = - 10V
0.02
0.015
0.01
0.005
0
0 1 2 3 4 5 6 7 8 V 10
- VDS
0
0 10 20 30 40 50 60 70 A 90
- ID
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
35
A
25
20
15
10
5
0
0 0.5 1 1.5 V 2.5
- VGS
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
120
S
100
90
80
70
60
50
40
30
20
10
0
0
5 10 15 20 25 30 A 40
- ID
Page 5
2001-12-21
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSO201SP.PDF ] | |
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