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PDF BSN20W Data sheet ( Hoja de datos )
| Número de pieza | BSN20W | |
| Descripción | N-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BSN20W
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 20
2000 Mar 10
1 page  
Philips Semiconductors
N-channel enhancement mode
vertical D-MOS transistor
Product specification
BSN20W
handbook,2h4alfpage
RDSon
(Ω)
16
8
(1)
(2)
(3)
MDA163
0
1 10 102 103
ID (mA)
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 5 V.
(3) VGS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of drain current; typical values.
handbook,8h0alfpage
RDSon
(Ω)
60
MDA162
40
20
0
02
46
8 10
VGS (V)
VDS = 0.1 V; Tj = 25 °C.
Fig.7 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
handbook,1h.a2lfpage
k
1.1
MRA785
1
0.9
0.8
0.7
−50
0
50 100 150
Tj (oC)
k = V-----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
Typical VGSth at 1 mA.
Fig.8 Temperature coefficient of gate-source
threshold voltage.
2000 Mar 10
handbook, h2alfpage
k
1.6
1.2
MRA784
(2)
(1)
0.8
0.4
−50
0
50
k = R-----D-R---S-D--o--S-n--o--a-n---t--a-2--t-5---T---°-j--C---
Typical RDSon at 100 mA / 10 V.
(1) ID = 10 mA; VGS = 2.5 V.
(2) ID = 100 mA; VGS = 10 V.
100 150
Tj (oC)
Fig.9 Temperature coefficient of drain-source
on-state resistance.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSN20W.PDF ] | |
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