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PDF BSM75GD120DN2 Data sheet ( Hoja de datos )
| Número de pieza | BSM75GD120DN2 | |
| Descripción | IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSM75GD120DN2 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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BSM 75 GD 120 DN2
IGBT Power Module
Preliminary data
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 75 GD 120 DN2
VCE IC
Package
1200V 103A ECONOPACK 3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2516-A67
Values
1200
Unit
V
1200
± 20
103
75
A
206
150
520
+ 150
-55 ... + 150
≤ 0.235
≤ 0.55
2500
16
11
F
55 / 150 / 56
W
°C
K/W
Vac
mm
-
Semiconductor Group
1
Mar-27-1996
1 page  
BSM 75 GD 120 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
150
A
IC 120
110
100
17V
15V
13V
11V
9V
7V
90
80
70
60
50
40
30
20
10
0
0 1 2 3 V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
150
A
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
150
A
IC 120
110
100
17V
15V
13V
11V
9V
7V
90
80
70
60
50
40
30
20
10
0
0 1 2 3 V5
VCE
IC 120
110
100
90
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10 V 14
VGE
Semiconductor Group
5
Mar-27-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSM75GD120DN2.PDF ] | |
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