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PDF BUZ342 Data sheet ( Hoja de datos )
| Número de pieza | BUZ342 | |
| Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ342 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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BUZ 342
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Ultra low on-resistance
• 175°C operating temperature
Type
BUZ 342
VDS
50 V
ID
60 A
RDS(on)
0.01 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 150 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 60 A, VDD = 25 V, RGS = 25 Ω
L = 128 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 0 A, VDS = 0 V, diF/dt = 0 A/µs
Tjmax = 0 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-218 AA
Ordering Code
C67078-S3135-A2
Symbol
ID
IDpuls
EAS
dv/dt
Values
60
240
460
Unit
A
mJ
kV/µs
VGS
Ptot
Tj
Tstg
RthJC
RthJA
± 20
400
-55 ... + 175
-55 ... + 175
≤ 0.37
≤ 75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 page  
BUZ 342
Power dissipation
Ptot = ƒ(TC)
450
W
Ptot 350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
65
A
55
ID 50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
A
I
D
10 2
/ID
= V DS
R DS(on)
tp = 47.0µs
100 µs
1 ms
K/W
Z
thJC
10 -1
10 ms
D = 0.50
0.20
10 1
10 -2
0.10
DC 0.05
single pulse
0.02
0.01
10 0
10 0
10 1 V 10 2
VDS
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUZ342.PDF ] | |
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