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PDF BUT11APX-1200 Data sheet ( Hoja de datos )
| Número de pieza | BUT11APX-1200 | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11APX-1200
GENERAL DESCRIPTION
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 2 A; IB = 0.4 A
IC = 3 A; VCE = 5 V
IC = 2.5 A; IB1 = 0.5 A
TYP.
-
-
-
-
-
-
0.15
15.5
170
MAX.
1200
1200
550
6
10
32
1.0
-
300
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1200
550
1200
6
10
3
5
32
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
April 1999 1 Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11APX-1200
IC (A)
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig.13.
200
400
600
800
1,000
VCEclamp (V)
1,200
1,400
Reverse bias safe operating area. Tj ≤ Tj max
VCC
IBon
-VBB
LC
LB
VCL(RBSOAR)
PROBE POINT
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
Vcl ≤ 1200V; Vcc = 150V; VBB = -5V; LB = 1µH;Lc =
200µH
April 1999 5 Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUT11APX-1200.PDF ] | |
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