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PDF BUP602D Data sheet ( Hoja de datos )
| Número de pieza | BUP602D | |
| Descripción | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BUP 602D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 602D
VCE IC
600V 36A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Diode forward current
TC = 90 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67040-A4229-A2
Values
600
Unit
V
600
± 20
36
22
A
72
40
31
180
150
- 55 ... + 150
- 55 ... + 150
W
°C
Semiconductor Group
1
Jul-31-1996
1 page  
BUP 602D
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
40
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
40
A
IC
30
25
17V
15V
13V
11V
9V
7V
A
IC
30
25
17V
15V
13V
11V
9V
7V
20 20
15 15
10 10
5
0
0 1 2 3 V5
VCE
5
0
0 1 2 3V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
40
A
IC
30
25
20
15
10
5
0
0 2 4 6 8 10 V 14
VGE
Semiconductor Group
5
Jul-31-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUP602D.PDF ] | |
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