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PDF BUP213 Data sheet ( Hoja de datos )
| Número de pieza | BUP213 | |
| Descripción | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUP213 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BUP 213
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 213
VCE IC
1200V 32A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67040-A4407-A2
Values
1200
Unit
V
1200
± 20
32
20
A
64
40
mJ
22
200
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Nov-30-1995
1 page  
BUP 213
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
30 30
AA
IC 24
22
20
17V
15V
13V
11V
9V
7V
IC 24
22
20
17V
15V
13V
11V
9V
7V
18 18
16 16
14 14
12 12
10 10
88
66
44
2
0
0 1 2 3V5
VCE
2
0
0 1 2 3V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
30
A
IC 24
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 V 14
VGE
Semiconductor Group
5
Nov-30-1995
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUP213.PDF ] | |
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