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PDF BUL49A Data sheet ( Hoja de datos )
| Número de pieza | BUL49A | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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BUL49A
MECHANICAL DATA
Dimensions in mm
40.01 (1.575)
Max.
22.23 (0.875)
Max.
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
11.18 (0.440)
10.67 (0.420)
2
1
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
11.43 (0.450)
6.35 (0.250)
12.19 (0.48)
1.63 (0.064) 11.18 (0.44)
1.52 (0.060)
4.09 (0.161)
3.84 (0.151)
2 Pls
Pin 1 – Base
16.97 (0.668)
16.87 (0.664)
TO3
Pin 2 – Emitter
Case is Collector
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
600V
VCEO
Collector – Emitter Voltage (IB = 0)
300V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
25A
IC(PK)
Peak Collector Current
40A
Ptot Total Dissipation at Tcase = 25°C
200W
Tstg Operating and Storage Temperature Range
–65 to 175°C
Rth Thermal Resistance (junction-case)
Max. 0.7°CW
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Prelim. 4/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL49A.PDF ] | |
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