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PDF BUK573-48C Data sheet ( Hoja de datos )
| Número de pieza | BUK573-48C | |
| Descripción | PowerMOS transistor Clamped logic level FET | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
GENERAL DESCRIPTION
Protected N-channel enhancement
mode logic level field-effect power
transistor in a plastic full-pack
envelope.
The device is intended for use in
automotive applications. It has
built-in zener diodes providing active
drain voltage clamping.
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
QUICK REFERENCE DATA
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V(CL)DSR
ID
Ptot
WDSRR
RDS(ON)
Drain-source clamp voltage
Drain current (DC)
Total power dissipation
Repetitive clamped turn off
energy; Tj = 150˚C
Drain-source on-state
resistance; VGS = 5 V
40 48 58 V
13 A
25 W
50 mJ
85 mΩ
PIN CONFIGURATION
SYMBOL
d
case
12 3
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDG
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Storage temperature
Junction Temperature
continuous
continuous
-
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
-
-
-
-
-
-
- 55
- 55
MAX.
30
30
15
13
8.2
52
25
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 5 K/W
- 55 - K/W
August 1994
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
V(CL)DSR / V
51
BUK5Y3-48C
50
49
48
47
46
Tmb / degC =
45
150
44 25
-55
43
0 2 4 6 8 10 12
ID / A
Fig.9. Typical clamping voltage
V(CL)DSR = f(ID) ; conditions: RG = 10 kΩ
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 5 V
IS / A
40
Tmb / degC =
150
30 25
-55
20
BUK5Y3-48C
10
0
0 0.5 1 1.5
VSDS / V
Fig.11. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
V(CL)DSR / V
58
56
54
BUK5Y3-48C
Tmb / degC =
150
25
-55
52
50
48
46
44
12
5 10
RG / kOhm
Fig.12. Typical clamping voltgage
V(CL)DSR = f(RG) ; conditions: ID = 10 A.
20
VGS(TO) / V
2
1
max.
typ.
min.
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
Fig.13. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID / A
1E-01
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
0 0.4 0.8 1.2 1.6 2 2.4
VGS / V
Fig.14. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
August 1994
5
Rev 1.000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUK573-48C.PDF ] | |
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