|
|
Número de pieza | BUK475-60H | |
Descripción | PowerMOS transistor Isolated version of BUK455-60H | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUK475-60H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
PowerMOS transistor
Isolated version of BUK455-60H
Product specification
BUK475-60H
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The device
is intended for use in Automotive
applications, Switched Mode Power
Supplies (SMPS), motor control,
welding, DC/DC and AC/DC
converters, and in general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
22.5
30
150
34
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 kΩ
-
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
TYP.
-
55
MAX.
60
60
30
22.5
14
90
30
150
150
MAX.
4.17
-
UNIT
V
A
W
˚C
mΩ
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
November 1996
1
Rev 1.200
1 page Philips Semiconductors
PowerMOS transistor
Product specification
BUK475-60H
ID / A
1E-01
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
C / pF
10000
BUK4Y5-60H
Ciss
Coss
Crss
1000
100
0.1
1 10
VDS / V
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
VGS / V
20
BUK4Y5-60H
15
VDD / V = 12
48
10
5
0
0 10 20 30 40 50 60
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 43 A; parameter VDS
IS / A
100
Tj / C =
80
-40
25
150
60
BUKXY5-60H
40
20
0
0 0.5 1 1.5
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 43 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
November 1996
5
Rev 1.200
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BUK475-60H.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUK475-60A | PowerMOS transistor Isolated version of BUK455-60A/B | NXP Semiconductors |
BUK475-60B | PowerMOS transistor Isolated version of BUK455-60A/B | NXP Semiconductors |
BUK475-60H | PowerMOS transistor Isolated version of BUK455-60H | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |