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PDF BYV34-500 Data sheet ( Hoja de datos )
| Número de pieza | BYV34-500 | |
| Descripción | Dual rectifier diodes ultrafast | |
| Fabricantes | NXP Semiconductors | |
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BYV34-500
Dual ultrafast power diodes
4 June 2014
Product data sheet
1. General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
• Fast switching
• High thermal cycling performance
• Low forward voltage drop
• Low switching loss
• Low thermal resistance
• Soft recovery characteristic
3. Applications
• Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
• Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IO(AV)
average output current SQW; δ = 0.5; Tmb ≤ 115 °C; both
diodes conducting; Fig. 1; Fig. 2
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 150 °C; Fig. 4
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7; Fig. 5
Min Typ Max Unit
- - 500 V
- - 20 A
- 0.87 1.05 V
- 50 60 ns
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NXP Semiconductors
BYV34-500
Dual ultrafast power diodes
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 20 A; Tj = 25 °C; Fig. 4
IF = 10 A; Tj = 150 °C; Fig. 4
IR
reverse current
VR = 500 V; Tj = 25 °C
VR = 500 V; Tj = 100 °C
Dynamic characteristics
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/s;
Tj = 25 °C; Fig. 5; Fig. 6
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7; Fig. 5
IRM peak reverse recovery IF = 10 A; VR = 30 V; dIF/dt = 50 A/µs;
current
Tj = 100 °C; Fig. 8; Fig. 5
VFRM
forward recovery
voltage
IF = 10 A; dIF/dt = 10 A/µs; Tj = 25 °C;
Fig. 9
30
IF
(A)
20
003aaj487
IF
dlF
dt
(1) (2) (3)
10
Qr
Min Typ Max Unit
- 1.1 1.35 V
- 0.87 1.05 V
- 10 50 µA
- 0.2 0.6 mA
- 50 60 nC
- 50 60 ns
- 45A
- 2.5 - V
trr
time
25 %
100 %
0
0 0.5 1 1.5
VF (V)
Vo = 0.94 V; Rs = 0.01 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
2
Fig. 4. Forward current as a function of forward
voltage; per diode
IR IRM
003aac562
Fig. 5. Reverse recovery definitions; ramp recovery
BYV34-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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