|
|
Número de pieza | BYV32EB | |
Descripción | Rectifier diodes ultrafast/ rugged | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYV32EB (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV32E, BYV32EB series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
IO(AV) = 20 A
IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 anode 1 (a)
tab
tab
2 cathode (k) 1
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peaqk repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
BYV32E / BYV32EB
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Average rectified output current square wave; δ = 0.5;
(both diodes conducting)
Tmb ≤ 115 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
Tmb ≤ 115 ˚C
t = 10 ms
current per diode
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Storage temperature
Operating junction temperature
1 It is not possible to make connection to pin 2 of the SOT404 package
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-150
150
-200
200
150 200
150 200
20
20
125
137
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
July 1998
1 Rev 1.200
1 page Philips Semiconductors
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Product specification
BYV32E, BYV32EB series
10,3
max
3,7
2,8
1,3
4,5
max
5,9
min
15,8
max
3,0 max
not tinned
1,3
max 1 2 3
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5 Rev 1.200
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BYV32EB.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYV32E | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
BYV32E-100 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
BYV32E-150 | Dual rugged ultrafast rectifier diode | NXP Semiconductors |
BYV32E-200 | Dual rugged ultrafast rectifier diode | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |