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PDF BYV32E-200 Data sheet ( Hoja de datos )
| Número de pieza | BYV32E-200 | |
| Descripción | Dual rugged ultrafast rectifier diode | |
| Fabricantes | NXP Semiconductors | |
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BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 27 February 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VRRM
repetitive peak
reverse voltage
IO(AV)
average output
current
IRRM
repetitive peak
reverse current
VESD
electrostatic
discharge voltage
Dynamic characteristics
trr reverse recovery
time
Static characteristics
VF forward voltage
Conditions
square-wave pulse; δ = 0.5;
Tmb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
tp = 2 µs; δ = 0.001
HBM; C = 250 pF; R = 1.5
kΩ; all pins
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery;
see Figure 5
IR = 1 A; IF = 0.5 A;
Tj = 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
IF = 8 A; Tj = 150 °C; see
Figure 4
Min Typ Max Unit
- - 200 V
- - 20 A
- - 0.2 A
- - 8 kV
- 20 25 ns
- 10 20 ns
- 0.72 0.85 V
1 page  
NXP Semiconductors
BYV32E-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
32
IF
(A)
24
16
003aac981
(1) (2)
(3)
8
0
0 0.4 0.8 1.2 1.6
VF (V)
IF
dlF
dt
trr
time
25 %
Qr 100 %
IR IRM
003aac562
Fig 5. Reverse recovery definitions; ramp recovery
Fig 4. Forward current as a function of forward
voltage
IF
IF
IF trr
time
0.25 x IR
Qr
IR
IR
003aac563
Fig 6. Reverse recovery definitions; step recovery
VF
Fig 7. Forward recovery definitions
time
VFRM
VF
time
001aab912
BYV32E-200_4
Product data sheet
Rev. 04 — 27 February 2009
© NXP B.V. 2009. All rights reserved.
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