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Número de pieza | BYV118F-35 | |
Descripción | Rectifier diodes Schottky barrier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV118F, BYV118X series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated package
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 35 V/ 40 V/ 45 V
IO(AV) = 10 A
VF ≤ 0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118F series is supplied in the SOT186 package.
The BYV118X series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN DESCRIPTION
1 anode 1 (a)
case
case
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Ths ≤ 97 ˚C
BYV118F-
35 40 45
BYV118X-
35 40 45
- 35 40 45 V
- 35 40 45 V
- 35 40 45 V
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
square wave; δ = 0.5;
Ths ≤ 107 ˚C
square wave; δ = 0.5;
Ths ≤ 107 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
- 65
10
10
100
110
1
150
175
A
A
A
A
A
˚C
˚C
May 1998 1 Rev 1.100
1 page Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV118F, BYV118X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
1.0 (2x)
0.9
0.7
1.3
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998 5 Rev 1.100
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BYV118F-35.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYV118F-35 | Rectifier diodes Schottky barrier | NXP Semiconductors |
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