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PDF BYT261PIV-1000 Data sheet ( Hoja de datos )
| Número de pieza | BYT261PIV-1000 | |
| Descripción | FAST RECOVERY RECTIFIER DIODES | |
| Fabricantes | STMicroelectronics | |
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BYT60P-1000
® BYT261PIV-1000
FAST RECOVERY RECTIFIER DIODES
MAJOR PRODUCT CHARACTERISTICS
K2 A2
IF(AV)
VRRM
VF (max)
trr (max)
2 x 60 A
1000 V
1.8 V
70 ns
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance = 45 pF
Inductance< 5 nH
K1 A1
BYT261PIV-1000
ISOTOPTM
(Plastic)
DESCRIPTION
Dual or high single voltage rectifier devices suited
for Switch Mode Power Supplies and other power
converters.
These devices are packaged in ISOTOP or in
SOD93.
A
K
SOD93
(Plastic)
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IFRM
IF( RMS)
IF(AV)
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
tp=5 µs F=1kHz
RMS forward current
ISOTOP
SOD93
Average forward current δ = 0.5
Tc = 50°C ISOTOP
Tc = 60°C SOD93
Surge non repetitive forward current
tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
1000
1000
140
100
60
60
400
- 40 to + 150
150
Unit
V
A
A
A
A
°C
°C
TM: ISOTOP is a registered trademark of STMicroelectronics.
October 1999 - Ed: 4B
1/7
1 page  
Fig. 8: Recovery charges versus dIF/dt (per diode
for ISOTOP).
BYT60P-1000 / BYT261PIV-1000
Fig. 9: Recovery current versus dIF/dt (per diode
for ISOTOP).
Qrr(µC)
10
IF=IF(av)
90% confidence
8 Tj=100°C
6
4
2
0
10 20
dIF/dt(A/µs)
50 100
200
500
IRM(A)
80
IF=IF(av)
70 90% confidence
Tj=100°C
60
50
40
30
20
10
0
10 20
dIF/dt(A/µs)
50 100
200
500
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode for ISOTOP).
Fig. 11: Forward recovery time versus dIF/dt (per
diode for ISOTOP).
VFP(V)
tfr( µs)
45
IF=IF(av)
40 90% confidence
Tj=100°C
35
1.50
1.25
IF=IF(av)
90% confidence
Tj=100°C
30 1.00
25
0.75
20
15 0.50
10
5 dIF/dt(A/µs)
0.25
dIF/dt(A/µs)
0 0.00
0 100 200 300 400 500
0 100 200 300 400 500
Fig. 12: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
0.75
IRM
0.50
0.25
0
Qrr
Tj(°C)
25 50 75 100 125 150
5/7
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