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Número de pieza | BYQ30EB-200 | |
Descripción | Rectifier diodes ultrafast/ rugged | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ30E, BYQ30EB, BYQ30ED series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.95 V
IO(AV) = 16 A
IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ30E series is supplied in the SOT78 conventional leaded package.
The BYQ30EB series is supplied in the SOT404 surface mounting package.
The BYQ30ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB) SOT404
SOT428
PIN DESCRIPTION
1 anode 1
tab
tab tab
2 cathode 1
3 anode 2
tab cathode
1 23
2
13
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
BYQ30E/ BYQ30EB/ BYQ30ED
-
-
-
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tj
Tstg
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Peak non-repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
square wave; δ = 0.5; Tmb ≤ 104 ˚C
square wave; δ = 0.5; Tmb ≤ 104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
- 40
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
MAX.
-150
150
-200
200
150 200
150 200
16
16
80
88
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
October 1998
1
Rev 1.200
1 page Philips Semiconductors
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Product specification
BYQ30E, BYQ30EB, BYQ30ED series
10,3
max
3,7
2,8
1,3
4,5
max
5,9
min
15,8
max
3,0 max
not tinned
1,3
max 1 2 3
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BYQ30EB-200.PDF ] |
Número de pieza | Descripción | Fabricantes |
BYQ30EB-200 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |
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