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PDF MCC312-18io1 Data sheet ( Hoja de datos )

Número de pieza MCC312-18io1
Descripción Thyristor Module
Fabricantes IXYS 
Logotipo IXYS Logotipo



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Thyristor Module
Phase leg
Part number
MCC312-18io1
3 67 1
542
MCC312-18io1
VRRM
I TAV
VT
= 2x 1800 V
= 320 A
= 1.06 V
Backside: isolated
Features / Advantages:
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chip
Isolation voltage 3600 V~
Keyed gate/cathode twin pins
Applications:
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
Package: Y1
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: Copper
internally DCB isolated
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e

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MCC312-18io1 pdf
MCC312-18io1
Thyristor
10000
8000
ITSM
6000
[A]
4000
2000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
106
VR = 0 V
I2dt
105
[A2s]
TVJ = 45°C
TVJ = 140°C
600
500
400
I
T(AV)M
300
[A]
200
100
DC
180 ° sin
120 °
60 °
30 °
0
0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current
ITSM:Crest value, t: duration
600
500
400
Ptot
300
[W]
200
100
DC
180 ° sin
120 °
60 °
30 °
104
1
t [ms]
Fig. 2 I2dt versus time
10
RthKA K/W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
0
0 100 200 300 400 500 0
25 50 75 100 125 150
IT(AV)M [A]
TA [°C]
Fig. 4 Power dissipation versus on-state current and
ambient temperature (per thyristor)
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
10
1: IGT, TVJ = 140°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG 1
[V]
3
2
1
6
5
4
IGD, TVJ = 140°C
0.1
10-3 10-2 10-1
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
100 101 102
IG [A]
Fig. 5 Gate voltage & gate current
3000
2500
2000
Ptot
1500
[W]
1000
500
Circuit
B6
3xMCC312 or
3xMCD312
RthKA K/W
0.02
0.04
0.07
0.1
0.15
0.2
0.3
0
0 200 400 600 800 0
25 50 75 100 125 150
IDAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
100
tgd 10
[µs]
TVJ = 25°C
limit
typ.
1
0.01 0.1 1 10
IG [A]
Fig. 7 Gate controlled delay time tgd
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e

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