|
|
PDF MMBTA06 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA06 | |
| Descripción | Plastic-Encapsulate Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMBTA06 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
MMBTA06
Plastic-Encapsulate Transistor
Features
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• As complementary type, the PNP tranistor MMBTA56 is
recommended.
• This transistor is also available in the TO-92 case with the
type designation MPSA06.
A
L
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
3
Top View
12
Marking Code: 1GM
VG
3.Collector
1. Base
2. Emitter
BS
C
D
HK
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
4.0
Collector Current
Power Dissipation at TA = 25°C
IC 500
277(1)
Ptot 300(2)
Thermal Resistance Junction to Ambiant Air
RθJA
450 (1)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Notes: Device on alumina substrate.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100µA, IE = 0
80 — — V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
80 — — V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100µA, IC = 0
4.0 —
—
V
Collector-Emitter Cutoff Current
ICES
VCE = 60V, IB = 0
— — 100 nA
Collector-Base Cutoff Current
ICBO
VCB = 80V, IE = 0
— — 100 nA
Collector Saturation Voltage
VCEsat IC = 100mA, IB = 10mA
—
— 0.25 V
Base-Emitter On Voltage
VBE(on) IC = 100mA, VCE = 1V
—
—
1.2
V
DC Current Gain
hFE
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
100
100
—
—
—
—
—
—
Gain-Bandwidth Product
fT
VCE = 2V, IC = 10mA
f = 100MHz
100
—
— MHz
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBTA06.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMBTA05 | NPN Small Signal Transistor |  Taiwan Semiconductor |
| MMBTA05 | NPN Silicon Epitaxial Transistor | SeCoS |
| MMBTA05 | DRIVER TRANSISTOR |  Motorola Semiconductors |
| MMBTA05 | NPN Transistor |  HOTTECH |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |