Datasheet MMBTA06 Equivalent ( PDF ) - Transistor

SMD Type Features Driver transistors. NPN silicon. TransistIoCrs Driver Transistors MMBTA05, MMBTA06 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-b

MMBTA06 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 , Features MMBTA56 互 。 Complementary to MMBTA56. 用途 , Applications 用于中功率放大和 。 Ideal for medium power amplification and switching. 部等效 路 , Equivalent Circuit 引脚排列 , Pinning 3 2 1 PIN1：Emi

Plastic-Encapsulate Transistors FEATURES · Epitaxial Planar Die Construction · Complementary PNP Types Available (MMBTA55 , MMBTA56) · Ideal for Medium Power Amplification and Switching MMBTA05 MMBTA06 (NPN) 1. BASE 2. EMITTER 3. COLLECTO SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu

Elektronische Bauelemente MMBTA06 Plastic-Encapsulate Transistor Features RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP tranistor MMBTA56 is recommended. This transistor is also available in the TO-92 case with the type designation MPSA06. A L Mechani

MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting p