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Número de pieza | BCW66KF | |
Descripción | NPN Silicon AF Transistors | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCW66KF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! NPN Silicon AF Transistors
• For general AF applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCW66K
32
1
Type
BCW66KF
BCW66KG
BCW66KH
Marking
EFs
EGs
EHs
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation-
TS ≤ 115 °C
Junction temperature
Storage temperature
Pin Configuration
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
Package
SOT23
SOT23
SOT23
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
45
75
5
800
1
100
200
500
150
-65 ... 150
Unit
V
mA
A
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 70
Unit
K/W
1 2011-09-30
1 page BCW66K
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3 BCW 65/66
MHz
fT 5
EHP00391
10 2
5
10 1
10 0 10 1 10 2 mA
ΙC
Total power dissipation Ptot = ƒ(TS)
10 3
75
pF
60
55
50
45
CEB
40
35
30
25
20
15
10 CCB
5
00 2 4 6 8 10 12 14 16 V 20
RTF-1
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
550
450
400
350
300
250
200
150
100
50
00 15 30 45 60 75 90 105 120
150
10 3 BCW 65/66
Ptot max 5
Ptot DC
10 2
5
10 1
5
D = tp
T
tp
T
EHP00392
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
tp
10 0
5 2011-09-30
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BCW66KF.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCW66K | NPN Silicon AF Transistors | Infineon |
BCW66KF | NPN Silicon AF Transistors | Infineon |
BCW66KG | NPN Silicon AF Transistors | Infineon |
BCW66KH | NPN Silicon AF Transistors | Infineon |
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