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PDF SSFM1022 Data sheet ( Hoja de datos )

Número de pieza SSFM1022
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
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No Preview Available ! SSFM1022 Hoja de datos, Descripción, Manual

                                
Main Product Characteristics:
SSFM1022 
VDSS
RDS(on)
100V
19mohm
SSSSFFMT31900262
ID 40A
Features and Benefits:
TO220 
„ Advanced trench MOSFET process technology
Marking and pin
Assignment 
„ Special designed for PWM, load switching and general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175operating temperature
Schematic diagram 
Description: 
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
ISM
PD @TC = 25°C
PD @TC =100°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Pulsed Source Current (Body Diode)
Power Dissipation
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature
Range
Max.
40
36
160
160
3.2
2
100
± 25
42
29
-55 to + 175
Units
A
W
W
V
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t 10s)
Junction-to-Ambient (PCB mounted, steady-state)
Value
16
32
60
Unit
/W
/W
/W
©Silikron Semiconductor CO.,LTD.
 
2010.12.14 Version : 1.0 preliminary page 1of9
www.silikron.com 

1 page




SSFM1022 pdf
                                
1
SSFM1022 
0.1
0.01
0.001
Duty cycle
D=0.5,0.3,0.1,
0.05,0.01,single
Duty cycle D=T1/T,
TJmax)=PDM*ZθJA*RθJA+TA
RθJA=60/W
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
1000
Figure 12: Normalized Maximum Transient Thermal Impedance ()
©Silikron Semiconductor CO.,LTD.
 
2010.12.14 Version : 1.0 preliminary page 5of9
www.silikron.com 

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