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PDF SSF1030B Data sheet ( Hoja de datos )
| Número de pieza | SSF1030B | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
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SSF1030B
Feathers:
Advanced trench process technology
Ultra low Rdson, typical 25mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
ID =7A
BV=100V
Rdson=25mΩ（typ.）
Description:
The SSF1030B is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1030B is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
ID@Tc=100ْC
IDM
PD@TC=25ْC
VGS
EAS
EAR
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current ①
Power dissipation
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
SOP-8 TOP View Marking and pin Assignment
Max.
7
5.0
30
8.8
±20
33
TBD
–55 to +175
Units
A
W
V
mJ
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
—
—
Typ.
17
—
Max.
—
85
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
BVDSS
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Min.
100
—
2.0
—
—
Typ.
—
25
3.1
25
—
IDSS Drain-to-Source leakage current
——
Max. Units
—V
30 mΩ
4.0 V
—S
1
μA
10
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=10A
VDS=VGS,ID=250μA
VDS=15V,ID=6.9A
VDS=100V,VGS=0V
VDS=100V,
VGS=0V,TJ=150ْC
©Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
page 1 of 5
1 page  
SSF1030B
ATTENTION:
■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
Silikron representative nearest you before using any Silikron products described or contained herein in such applications.
■ Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage
to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur.
Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of Silikron Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor Corporation
2011.2.23
Version: 1.1
page 5 of 5
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| PDF Descargar | [ Datasheet SSF1030B.PDF ] | |
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