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PDF SSF3092G1 Data sheet ( Hoja de datos )

Número de pieza SSF3092G1
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
Logotipo Silikron Logotipo



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No Preview Available ! SSF3092G1 Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
30V
RDS(on) 92mohm(typ.)
ID 1.4A
SOT23
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF3092G1
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
1.4
1
8.4
0.62
30
± 20
-55 to + 150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
200
Units
/W
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 1 of 6

1 page




SSF3092G1 pdf
Ordering and Marking Information
Device Marking: 3092
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
SSF3092G1
Devices per Unit
Package Units/ Tubes/Inner
Type Tube Box
SOT23 3000
10
Units/Inner
Box
30000
Inner
Boxes/Carton
Box
4
Units/Carton
Box
120000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj= 150@ 80% of
Max VDSS/VCES/VR
Tj=150@ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0 page 5 of 6

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