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Número de pieza | SSFD4024 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSFD4024 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Main Product Characteristics:
VDSS
40V
RDS(on)
30 mohm
ID 12A
SSFD4024
TO-252 top view
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for Convertors and power controls
Ultra low on-resistance
175℃ operating temperature
SSFD4024
Marking and pin Assignment
Description:
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications
Absolute max Rating:
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current①
Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy②
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
12
12
30
20
± 20
22
10
-55 to + 175
Units
A
W
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient
Junction-to-Ambient (PCB mounted, steady-state)
©Silikron Semiconductor CO.,LTD.
2010.09.01
www.silikron.com
Version : 1.0
Value
7.5
30
60
Unit
℃/W
℃/W
℃/W
page 1of4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SSFD4024.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSFD4024 | MOSFET ( Transistor ) | Silikron |
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