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PDF SSFD4024 Data sheet ( Hoja de datos )

Número de pieza SSFD4024
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
Logotipo Silikron Logotipo



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No Preview Available ! SSFD4024 Hoja de datos, Descripción, Manual

                                                     
Main Product Characteristics:
VDSS
40V
RDS(on)
30 mohm
ID 12A
SSFD4024 
TO-252 top view
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for Convertors and power controls
„ Ultra low on-resistance
„ 175operating temperature
SSFD4024 
Marking and pin Assignment
Description:
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications
Absolute max Rating:
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
12
12
30
20
± 20
22
10
-55 to + 175
Units
A
W
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient
Junction-to-Ambient (PCB mounted, steady-state)
©Silikron Semiconductor CO.,LTD.
 
2010.09.01
www.silikron.com 
Version : 1.0
Value
7.5
30
60
Unit
/W
/W
/W
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