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PDF SSF13N50 Data sheet ( Hoja de datos )
| Número de pieza | SSF13N50 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Main Product Characteristics
VDSS
RDS(on)
500V
0.39Ω(typ.)
ID 13A
Features and Benefits:
TO-220
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF13N50
Marking and Pin
Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=4.5mH
Avalanche Current @ L=4.5mH
Operating Junction and Storage Temperature Range
Max.
13
8
52
166
1.33
500
± 30
753
18.3
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.12.09
www.silikron.com
Version : 1.1
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF13N50
Figure 5. Maximum Drain Current Vs. Case
Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.12.09
www.silikron.com
Version : 1.1
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF13N50.PDF ] | |
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