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PDF SSFD6046 Data sheet ( Hoja de datos )
| Número de pieza | SSFD6046 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
SSFD6046
ID =12A
BV=60V
Rdson=50mΩ（max.）
Description:
The SSFD6046 is a new generation of middle voltage
N–Channel enhancement mode trench power MOSFET. This
new technology increases the device reliability and electrical
parameter repeatability. SSFD6046 is assembled in high
reliability and qualified assembly house.
SSFD6046
TOP View (TO252)
Marking and pin Assignment
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
Continuous drain current,VGS@10V
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM
PD@TC=25ْC
Pulsed drain current ①
Power dissipation
Linear derating factor
VGS
EAS
EAR
TJ
TSTG
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
12
9
30
20
0.12
±20
8
TBD
–55 to +175
Units
A
W
W/ْ C
V
mJ
ْC
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-case
Junction-to-ambient
Min.
Typ.
Max.
— — 7.5
— — 60
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 60 — —
V
RDS(on) Static Drain-to-Source on-resistance — 46 50 mΩ
VGS(th)
Gate threshold voltage
1.0
3.0 V
gfs
Forward transconductance
— 15 — S
—— 1
IDSS
Drain-to-Source leakage current
μA
— — 10
IGSS
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
©Silikron Semiconductor Corporation
— — 100
— — -100
2010.09.01
nA
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=12A
VDS=VGS,ID=250μA
VDS=5V,ID=12A
VDS=60V,VGS=0V
VDS=60V,
VGS=0V,TJ=55ْC
VGS=20V
VGS=-20V
Version: 1.1
page
1of4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSFD6046.PDF ] | |
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