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PDF SSF4NS60D Data sheet ( Hoja de datos )
| Número de pieza | SSF4NS60D | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF4NS60D (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Main Product Characteristics:
VDSS
RDS(on)
600V
1.1Ω (typ.)
ID 4A ①
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
TO-252
SSF4NS60D
Marking and pin
Assignment
Schematic diagram
Description:
The SSF4NS60D series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
4①
2.5 ①
12
50
0.4
600
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.08.27
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF4NS60D
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2012.08.27
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF4NS60D.PDF ] | |
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