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PDF SSF6814 Data sheet ( Hoja de datos )

Número de pieza SSF6814
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
Logotipo Silikron Logotipo



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No Preview Available ! SSF6814 Hoja de datos, Descripción, Manual

SSF6814
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
ID =60A
BV=68V
Rdson=14mΩmax.
Description:
The SSF6814 is a new generation of middle voltage and high
current NChannel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6814 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
ID@Tc=100ْC
IDM
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current
PD@TC=25ْC
Power dissipation
Linear derating factor
VGS Gate-to-Source voltage
EAS Single pulse avalanche energy
EAR Repetitive avalanche energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
SSF6814 TOP View (TO220)
Max.
60
42
240
108
0.74
±20
154
TBD
55 to +175
Units
A
W
W/ Cْ
V
mJ
ْC
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-case
Junction-to-ambient
Min.
Typ.
1.39
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source breakdown voltage 68 — —
V
RDS(on) Static Drain-to-Source on-resistance 12 14 mΩ
VGS(th)
gfs
Gate threshold voltage
Forward transconductance
2.0 4.0
60
—— 2
V
S
IDSS
Drain-to-Source leakage current
μA
— — 10
Gate-to-Source forward leakage
IGSS Gate-to-Source reverse leakage
©Silikron Semiconductor Corporation
— — 100
— — -100
2010.08.27
nA
Max.
62
Units
ْC/W
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=68V,VGS=0V
VDS=68V,
VGS=0V,TJ=150ْC
VGS=20V
VGS=-20V
Version: 2.2
page 1of5

1 page




SSF6814 pdf
TO220 MECHANICAL DATA:
SSF6814
©Silikron Semiconductor Corporation
2010.08.27
Version: 2.2
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