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PDF SSF80100 Data sheet ( Hoja de datos )
| Número de pieza | SSF80100 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
75V
RDS(on) 8mΩ(typ.)
ID 80A ①
Features and Benefits:
TO220
Advanced MOSFET process technology
Special designed for motor control, PWM, load
switching etc.
Ultra low on-resistance with low gate charge
Excellent Qgd/Qgs rating
Fast switching and reverse body recovery
175℃ operating temperature
SSF80100
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application, motor control and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
80 ①
70 ①
320
200
2.0
75
± 20
375
50
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.10.20
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF80100
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2014.10.20
www.silikron.com
Version: 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF80100.PDF ] | |
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