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PDF SSF2129H3 Data sheet ( Hoja de datos )
| Número de pieza | SSF2129H3 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
RDS(on)
-20V
21mΩ (typ.)
ID -6.0A
Features and Benefits:
SOP-8
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF2129H3
D1
G1
G2
D2
Marking and pin
Assignment
S1 S2
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJC
Characterizes
Junction-to-case③
RθJA Junction-to-ambient (t ≤ 10s) ④
Max.
-6
-24
2.0
0.016
-20
±8
-55 to +150
Typ.
—
—
Max.
40
78
Units
A
W
W/°C
V
V
°C
Units
℃/W
℃/W
©Silikron Semiconductor CO., LTD.
2013.01.22
www.silikron.com
Version: 1.0
page 1 of 7
1 page  
Mechanical Data：
SOP8 PACKAGE OUTLINE DIMENSION
SSF2129H3
©Silikron Semiconductor CO., LTD.
2013.01.22
www.silikron.com
Version: 1.0
page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF2129H3.PDF ] | |
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