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Número de pieza | SSF2145CH6 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF2145CH6 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Main Product Characteristics:
n-ch p-ch
VDSS
20V -20V
RDSon(typ.) 38mohm 64mohm
ID
4.8A
2.9A
SSF2145CH6
TSOP-6
Marking and pin
Assignment
Schematic diagram
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for load switching and buttery
protection applications
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in load switching and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
N-channel P-channel
4.8 -2.9
3.9 -2.4
17 -11
1.7 1.7
20 -20
±8 ±8
-55 to + 150 -55 to + 150
Units
A
W
V
V
°C
Thermal Resistance
Symbol Characterizes
Junction-to-ambient (t ≤ 10s) ④
RθJA Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
Max.
N-channel P-channel
76 114
— 53
53
Units
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2011.07.22
www.silikron.com
Version : 1.0
page 1 of 6
1 page Ordering and Marking Information
Device Marking: 2145C
Package (Available)
TSOP-6
Operating Temperature Range
C : -55 to 150 ºC
SSF2145CH6
Devices per Unit
Package
Type
TSOP-6
Units/ Tubes/
Tube
Inner Box
3000pcs 10pcs
Units/
Inner Box
30000pcs
Inner Boxes/
Carton Box
4pcs
Units/
Carton Box
120000pcs
Reliability Test Program
Test Item Conditions
High
Tj=125℃ or 150℃ @
Temperature 80% of Max
Reverse
Bias(HTRB)
VDSS/VCES/VR
High
Tj=125℃ or 150℃ @
Temperature 100% of Max VGSS
Gate
Bias(HTGB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO.,LTD.
2011.07.22
www.silikron.com
Version : 1.0
page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSF2145CH6.PDF ] |
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