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PDF MMBT4403 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4403 | |
| Descripción | PNP Silicon Switching Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBT4403 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MMBT4403
Elektronische Bauelemente
PNP Silicon
Switching Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
A
L
3
Top View
12
BS
VG
C
D HK
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
J S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
Value
-40
-40
-5
-0.6
0.3
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic=-100μA , IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO IC= -1mA , IB=0
-40
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-35V , IE=0
Collector cut-off current
ICEO
VCE=-35 V , IB=0
Emitter cut-off current
IEBO VEB=-4V , IC=0
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
hFE
VCE=-2 V, IC= -150mA 100
300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
MARKING: 2T
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
VCE(sat)
VBE(sat)
fT
IC=-150 mA, IB=-15mA
-0.4 V
IC=- 150 mA, IB=-15mA
-0.95 V
VCE= -10V, IC= -20mA
f = 100MHz
200
MHz
Any changing of specification will not be informed individual
Page 1 of 4
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT4403.PDF ] | |
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