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PDF MMBT4401 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4401 | |
| Descripción | NPN Silicon Switching Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
MMBT4401
NPN Silicon
Switching Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
A
L
3
Top View
12
BS
3
1
2
VG
C
D
HK
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THE RMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
T hermal R es is tance, J unction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4401 = 2X
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RθJA
PD
RθJA
T J , Ts tg
Value
40
60
6.0
600
Max
300
1.8
556
300
2.4
417
-55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. FR±5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width =< 300 µs, Duty Cycle =< 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ oC
oC/W
mW
mW/ oC
oC/W
oC
Symbol
V(BR)CEO
V(B R)CBO
V(BR)EBO
IBEV
ICEX
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Min
Max
Unit
Vdc
40 —
Vdc
60 —
Vdc
6.0 —
µAdc
— 0.1
µAdc
— 0.1
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 5
1 page  
Elektronische Bauelemente
MMBT4401
NPN Silicon
Switching Transistor
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
VCE = 1.0 V
VCE = 10 V
STATIC CHARACTERISTICS
TJ = 125°C
25°C
– 55°C
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, Collector Current (mA)
Figure 15. DC Current Gain
30
50 70 100
200 300 500
1.0
0.8
0.6
IC = 1.0 mA
0.4
10 mA
100 mA
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, Base Current (mA)
Figure 16. Collector Saturation Region
TJ = 25°C
500 mA
20 30 50
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 10 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, Collector Current (mA)
Figure 17. “On” Voltages
500
+ 0.5
0 qVC for VCE(sat)
– 0.5
– 1.0
– 1.5
– 2.0 qVB for VBE
– 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, Collector Current (mA)
Figure 18. Temperature Coefficients
500
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBT4401.PDF ] | |
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