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PDF MMBT4401 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4401 | |
| Descripción | Surface Mount General Purpose Si-Epi-Planar Transistors | |
| Fabricantes | Diotec | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBT4401 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MMBT4401
MMBT4401
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2015-05-12
0.4+0.1
-0.05
2.9 ±0.1
3
Type
Code
1
2
1.1+0.1
-0.2
1.9±0.1
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
Tj
TS
Grenzwerte (TA = 25°C)
MMBT4401
40 V
60 V
6V
250 mW 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 150 mA, VCE = 1 V
IC = 500 mA, VCE = 2 V
h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio – Spannungsrückwirkung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 20
–
–
hFE 40
–
–
hFE 80
–
–
hFE 100 – 300
hFE 40
–
–
hfe 40
hie 1 kΩ
hoe 1 µS
hre 0.1*10-4
–
–
–
–
500
15 kΩ
30 µS
8*10-4
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT4401.PDF ] | |
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