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PDF MMBT3906 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3906 | |
| Descripción | PNP Small Signal Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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Small Signal Product
MMBT3906
Taiwan Semiconductor
350mW, PNP Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008g (approximately)
- Marking Code: 2A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 350
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -200
Thermal Resistance Junction-Ambient
RθJA
357
Junction and Storage Temperature Range
TJ , TSTG
-55 to + 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
UNIT
mW
V
V
V
mA
oC/W
oC
PARAMETER
Collector-Base Breakdown Voltage
IC = 10 μA IE = 0
Collector-Emitter Breakdown Voltage
IC = -1 mA IB = 0
Emitter-Base Breakdown Voltage
IE = -10 μA IC = 0
Collector Base Cut-off Current
VCB = -40 V
Emitter Base Cut-off Current
VEB = -6 V
VCE = -1 V IC = -0.1 mA
VCE = -1 V IC = -1 mA
DC Current Gain
VCE = -1 V IC = -10 mA
VCE = -1 V IC = -50 mA
VCE = -1 V IC = -100 mA
Collector-Emitter Saturation Voltage
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
Base-Emitter Saturation Voltage
IC = -10 mA
IC= -50 mA
IB = -1 mA
IB = -5 mA
Gain-Bandwidth Product VCE = -20 V
IC = -10 mA f= 100MHz
Output Capacitance
VCB = -5 V
IE = 0
f= 1MHz
Delay time
VCC = -3 V
VBE = -0.5 V IC = -10 mA
Rise time
IB1 = -1.0 mA
Storage time
VCC = -3 V IC = -10 mA
Fall time
IB1 = IB2 = -1.0 mA
Document Number: DS_S1412033
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
td
tr
ts
tf
MIN
-40
-40
-5
-
-
60
80
100
60
30
-
-
-0.65
-
250
-
-
-
-
-
MAX
-
-
-
-100
-50
UNIT
V
V
V
nA
nA
300
-0.25
-0.4
-0.85
-0.95
-
4.5
35
35
225
75
V
V
MHz
pF
ns
ns
ns
ns
Version: F14
1 page  
Small Signal Product
MMBT3906
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412033
Version: F14
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBT3906.PDF ] | |
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