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Número de pieza | MMBT3906 | |
Descripción | General Purpose Transistor PNP Silicon | |
Fabricantes | WEITRON | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MMBT3906 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! General Purpose Transistor
PNP Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT3906
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R θJA
PD
R θJA
TJ,Tstg
Device Marking
MMBT3906=2A
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0)
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width<=300 µS, Duty Cycle<=2.0%.
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Symbol
Min Max Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
-40 - Vdc
-40 - Vdc
-5.0 - Vdc
- -50 nAdc
- -50 nAdc
WEITRON
http://www.weitron.com.tw
1 page MMBT3906
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
TYPICAL STATIC CHARACTERISTICS
TJ=+125 C
+25 C
-55 C
VCE=10V
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
IC COLLECTOR CURRENT (mA)
FIG.13 DC Current Gain
20 30 50
70 100
200
1.0
0.8 IC=1.0mA
0.6
10mA
30mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07
0.1
0.2 0.3
0.5 0.7
1.0
IB BASE CURRENT (mA)
FIG.14 Collector Saturation Region
TJ=25 C
100mA
2.0 3.0
5.0 7.0
10
1.0
TJ=25 C
0.8
0.6
VBE(sat) @ IC/IB=10
VBE(sat) @VCE=1.0V
0.4
VCE(sat) @ IC/IB=10
0.2
0
10
20 50
10
20
50 100 200
IC COLLECTOR CURRENT (mA)
FIG.15 "ON" Voltages
1.0
0.5 qVC FOR VCE(sat)
0
-0.5
-1.0
-1.5 qVB FOR VBE(sat)
+25 C TO +125 C
-55 C TO +25 C
+25 C TO +125 C
-55 C TO +25 C
-2.0
0
20 40 60 80 100 120 140 160 180 200
IC COLLECTOR CURRENT (mA)
FIG.16 Temperature Coefficients
WEITRON
http://www.weitron.com.tw
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MMBT3906.PDF ] |
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