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PDF MMBR2060 Data sheet ( Hoja de datos )
| Número de pieza | MMBR2060 | |
| Descripción | RF AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R 0JA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
30
14
4.0
50
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
MMBR2060
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, Ib = 0)
Collector Cutoff Current
(VC B = 10 Vdc, Ig = 0)
Emitter Cutoff Current
(VEB = 4.0, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 5.0 mAdc, Vce = 5.0 Vdc)
(IC = 20 mAdc, Vce = 10 Vdc, f = 500 MHz)
Collector-Emitter Saturation Voltage
dC = 80 mAdc, Ig = 8.0 mAdc)
Base-Emitter Saturation Voltage
dC = 40 mAdc, Ib = 20 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
C(l
=
20 mAdc, Vce
=
1° vdc f
-
=
100 MHz)
Collector-Base Capacitance
(VC B = 10 Vdc, l£ = 0)
Emitter-Base Capacitance
(V E B = 0.5 Vdc, Ic = 0)
Noise Figure
(Vce
=
10
Vdc
-
IE
=
51 - mAdc, f
=
450 MHz)
Common-Emitter Amplifier Power Gain
(Vce
=
1°
vdc
'
IE
=
51 - mAdc, f
=
450 Mhz)
(1) Noise figure and power gain measured on the Ailtech 7380 50 fl system.
Symbol
v (BR)CEO
'CBO
!EBO
Min
14
h FE
v CE(sat)
v BE(sat)
fT
c cb
Ceb
NF(1)
G pe (D
20
2.0
—
—
—
—
—
—
12.5
Max
-
0.38
0.98
1.0
1.0
3.0
3.5
—
ZlUnit
Vdc
nAdc
/LiAdc
"
Vdc
Vdc
GHz
PF
PF
dB
dB
3-69
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBR2060.PDF ] | |
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