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PDF MSR2N2369AUBC Data sheet ( Hoja de datos )
| Número de pieza | MSR2N2369AUBC | |
| Descripción | Rad Hard NPN Silicon High Speed Switching Transistor | |
| Fabricantes | Microsemi | |
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MSR2N2369AUB / UBC
Rad Hard NPN Silicon High Speed
Switching Transistor
Screened per MIL-PRF-19500 & ESCC 22900
Screened Levels:
MSR
Radiation Level
TID
ELDRS
QPL RANGE and RAD LEVEL
MSR2N2369AUB
100 Krad
100 Krad
DESCRIPTION
This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to
drive many high-reliability applications. This device is constructed and screened to a JANSR
performance level with radiation test method 1019 wafer lot acceptance conducted on all die
lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness
assurance requirements for space flight projects
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N2369
TID level screened per MIL-PRF-19500
Also available with ELDRS testing to 0.01 Rad(s)/ sec
MKCR / MHCR chip die available
RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose rate
APPLICATIONS / BENEFITS
Rad-Hard power supplies
Rad-Hard motor controls
General purpose switching
Instrumentation Amps
EPS Satellite switching power applications
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise noted
UB & UBC
Package
Also available in:
AU package
(surface mount)
MSR2N2369AU
TO-206AA package
(leaded top-hat)
MSR2N2369A
UA package
(surface mount)
MSR2N2369AUA
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Solder Pad
Thermal Resistance Junction-to-Ambient
Total Power Dissipation:
@ TA = +25 ºC (1)
@ TC = +125 ºC (2) (3)
@ TSP = +125 ºC (2)
Collector-Base Voltage, Emitter Open
Emitter-Base Voltage, Collector Open
Collector-Emitter Voltage, Base Open
Collector Current, dc
Solder Temperature @ 10 s
Symbol
TJ and TSTG
RӨJSP
RӨJA
PT
VCBO
VEBO
VCEO
VCES
TSP
Value
-65 to +200
210
486
0.36
0.36
0.36
40
4.5
15
40
260
Notes: 1. Derate linearly 2.06 mW/°C above TA = +25°C.
2. Derate linerly 4.8 mW/°C above TC =+125°C. See Figure 1.
3. Power dissipation limited to 360 mW per chip regardless of thermal resistance.
Unit
ºC
ºC/W
ºC/W
W
V
V
V
V
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 1 of 7
1 page  
MSR2N2369AUB / UBC
Radiation hardness assurance
The MSR series product are guaranteed in radiation with full compliance to MIL-PRF-19500 specification
JANSR level and are also guaranteed to meet ESCC 22900 specifications (General specifications) .
Radiation assurance MIL-PRF-19500
MSR parts are guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-19500 specification, specifically
the Group D, subgroup 2 inspection, between 50 and 300 rad/s. All test are performed in accordance to MIL-PRF-19500
and test method 1019 of MIL-STD-750 for total Ionizing dose.
– Each wafer of each lot is tested, (note 1). The table below provides for each monitored
parameters of the test conditions and the acceptance criteria
Radiation summary
Radiation test (Note 1)
Wafer test
Part tested
Dose rate
Acceptance
Displacement damage
100 krad ESCC
each
10 biased + 10 unbiased
0.1 rad/s
MIL-STD-750 method 1019
Optional
1. Microsemi MSR products will exceed required testing of ESCC basic specification 22900
2.
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
POST RADIATION
Parameters / Test Conditions
Collector to Base Cutoff Current
VCB = 40 V
VCB = 32 V
Emitter to Base Cutoff Current
VEB = 4.5 V
VEB = 4 V
Collector to Emitter Breakdown Voltage
IC = 10 mA
Forward-Current Transfer Ratio (2)
IC = 10 mA, VCE = 0.35 V
IC = 30 mA, VCE = 0.4 V
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
Symbol
ICBO
Min.
IEBO
V(BR)CEO
[hFE]
VCE(sat)
15
[20]
[15]
[20]
[10]
VBE(sat)
0.70
Max.
20
0.4
20
0.50
Unit
µA
µA
V
120
120
120
120
0.23
0.29
V
0.98
1.04
V
(2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radiation minimum hFE that it is based upon.
T4-LDS-0338-3, Rev. 1 (04/22/14)
©2014 Microsemi Corporation
Page 5 of 7
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