|
|
Número de pieza | 2N3980 | |
Descripción | PN UNIJUNCTION TRANSISTOR | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3980 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 2N3980
High-reliability discrete products
and engineering services since 1977
PN UNIJUNCTION TRANSISTOR
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
RMS power dissipation (1)
RMS emitter current
Peak pulse emitter current (2)
Emitter reverse voltage
Interbase voltage
Storage temperature range
Symbol
PD
Ie
ie
VB2E
VB2B1
Tstg
Value
360
60
1
30
35
-65 to 200
Unit
mW
mA
Amp
Volts
Volts
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Intrinsic standoff ratio
VB2B1 = 10V (1)
ŋ 0.68 - 0.82 -
Interbase resistance
VB2B1 = 3V, IE = 0
RBB 4 6 8 kΩ
Interbase resistance temperature coefficient
VB2B1 = 3V, IE = 0, TA = -65 to +100°C
αRBB
0.4
-
0.9 %/°C
Emitter saturation voltage
VB2B1 = 10V, IE = 50mA (2)
VEB1(sat)
-
2.5
3 Volts
Modulated interbase current
VB2B1 = 10V, IE = 50mA
IB2(mod)
12
15
-
mA
Emitter reverse current
VB2E = 30V, IB1 = 0
VB2E = 30V, IB1 = 0, TA = 125°C
IEB20
-
-
5 10 nA
- 1 µA
Peak point emitter current
VB2B1 = 25V
IP - 0.6 2 µA
Valley point current
VB2B1 = 20V, RB2 = 100Ω (2)
IV 1 4 10 mA
Base one peak pulse voltage(3)
Figure 3
VOB1
6
8
- Volts
Maximum oscillation frequency
Figure 4
f(max) - 400 - kHz
Note 1: Intrinsic standoff ratio,
ŋ is defined by equation:
ŋ = VP – (VEB1)
VB2B1
Where: VP = Peak point emitter voltage
VB2B1 = Interbase voltage
Note
2V: UF =seepmuiltsteertetochbnaisqeu-eosn:ePjWun≈ct3io0n0µdsiodduetydcroycple(0≤.425%V
@
to
10µA)
avoid internal
heating
due
to
interbase
modulation
which
may
result
in
erroneous
readings.
Note 3: Base-one peak pulse voltage is measured in circuit of Figure 3. This specification is used to ensure minimum pulse amplitude for applications in ACR firing circuits and other types of pulse
circuits.
MECHANICAL CHARACTERISTICS
Rev. 20121019
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N3980.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N398 | Trans GP BJT PNP 105V 0.1A | New Jersey Semiconductor |
2N3980 | Trans GP BJT PNP 105V 0.2A | New Jersey Semiconductor |
2N3980 | PN Unijunction Transister | Motorola Semiconductors |
2N3980 | PN UNIJUNCTION TRANSISTOR | Digitron Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |