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PDF MURF860 Data sheet ( Hoja de datos )

Número de pieza MURF860
Descripción GLASS PASSIVATED SUPER FAST RECTIFIER
Fabricantes JINAN JINGHENG ELECTRONICS 
Logotipo JINAN JINGHENG ELECTRONICS Logotipo



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No Preview Available ! MURF860 Hoja de datos, Descripción, Manual

R
SEMICONDUCTOR
MURF820 THRU MURF860
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 8.0Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
JF
MURF860
High temperature soldering guaranteed:260 C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011/65/EU
0.177(4.50)
0.138(3.50)
0.056(1.43)
0.043(1.10)
MECHANICAL DATA
Case: JEDEC ITO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08ounce, 2.24 gram
ITO-220AC
0.410(10.42)
0.388(9.85)
0.140(3.55)
0.128(3.25)
DIA
0.111(2.83)
0.101(2.57)
0.187(4.75)
0.167(4.25)
0.272(6.90)
0.256(6.50)
0.130(3.31)
0.110(2.81)
0.610(15.5)
0.571(14.5)
PIN
12
0.029(0.73)
0.019(0.47)
0.208(5.28)
0.192(4.88)
1.161(29.50)
1.083(27.50)
0.551(14.00)
0.496(12.60)
0.136(3.45)
0.102(2.60)
0.029(0.73)
0.019(0.47)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
MURF820
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
TA =25°C
TA =125°C
Maximum Reverse Recovery Time (Note 2)
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
Trr
200
140
200
0.975
5
Typical thermal resistance (Note 3)
RθJC
Operating junction temperature range
Storage temperature range
TJ
TSTG
Notes: 1. Pulse test: 300 s pulse width,1% duty cycle
2. Reverse recovery test conditions IF=0.5A,IR=1.0A, Irr=0.5A
3. Thermal resistance from junction to case
MURF840
400
280
400
8.0
MURF860
600
420
600
15900.0
1.3
500
35
1.5
-55 to+150
-55 to+150
10
1.7
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
ns
°C/W
°C
°C
JINAN JINGHENG ELECTRONICS CO., LTD.
9-20
HTTP://WWW.JINGHENGGROUP.COM

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