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PDF MUR170 Data sheet ( Hoja de datos )

Número de pieza MUR170
Descripción HIGH EFFICIENCY RECTIFIERS
Fabricantes Galaxy Semi-Conductor 
Logotipo Galaxy Semi-Conductor Logotipo



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No Preview Available ! MUR170 Hoja de datos, Descripción, Manual

BLGALAXY ELECTRICAL
MUR170 --- MUR1100
HIGH EFFICIENCY RECT IFIERS
VOLTAGE RANGE: 700---1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-41, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces , 0.34gram s
Mounting: Any
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR170 MUR180 MUR190 MUR1100 UNITS
Maximum recurrent peak reverse voltage
VRRM
Maximum RMS voltage
V R MS
Maximum DC blocking voltage
VDC
Maximum average forw ard rectif ied current
9.5mm lead length, @TA=75
IF (AV)
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@ TJ =125
Maximum instantaneous f orw ard voltage
@ 1.0A
IF SM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
IR
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
CJ
RθJA
TJ
Storage temperature range
TSTG
N OTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance from junction to ambient.
700
490
700
800 900
560 630
800 900
1.0
30.0
1.7
10.0
600
75
15
60
- 55 ----- + 125
- 55 ----- + 150
1000
700
1000
V
V
V
A
A
V
A
ns
pF
/W
www.galaxycn.com
Document Number 1562121
BLGALAXY ELECTRICAL
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