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PDF MMBFU310LT1G Data sheet ( Hoja de datos )
| Número de pieza | MMBFU310LT1G | |
| Descripción | JFET Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMBFU310LT1G
JFET Transistor
N−Channel
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS 25 Vdc
Gate−Source Voltage
VGS 25 Vdc
Gate Current
IG 10 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR− 5 = 1.0 0.75 0.062 in.
PD 225 mW
1.8 mW/°C
RqJA
556 °C/W
TJ, Tstg − 55 to +150
°C
www.onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
MARKING DIAGRAM
M6C M G
G
1
M6C = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBFU310LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 6
1
Publication Order Number:
MMBFU310LT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBFU310LT1G.PDF ] | |
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