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PDF 2N3838 Data sheet ( Hoja de datos )
| Número de pieza | 2N3838 | |
| Descripción | COMPLEMENTARY DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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2N3838
CASE 610A-04, STYLE 1
COMPLEMENTARY DUAL
AMPLIFIER TRANSISTOR
NPN/PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector 1 to Collector 2 Voltage
Voltage Rating any Lead to Case
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
VC1C2
40
±120
±120
Vdc
Vdc
VCBO
VEBO
"C
60
5.0
600
One Die Both Die
Vdc
Vdc
mAdc
PD
0.25
0.35
Watt
1.67
2.34 mW/°C
pd 0.7
1.4 Watts
4.67
9.34
Tj, Tst g
- 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
3Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged) Oc = 10 mAdc, Ib = 0)
Collector-Emitter Nonmatching Voltage
('C(on)
=
600
mAdc
-
'B(on)
=
1 20 mAdc,
Bl (off)
=
0)
Collector-Base Breakdown Voltage Oc = 10 /nAdc, E| = Q)
Emitter-Base Breakdown Voltage (lg = 10 ^Adc, \q = 0)
Base Cutoff Current (Vqe = 50 Vdc, VBE(off) = °- 5 vdc >
Collector Cutoff Current (Vce
(VCE
50 Vdc, V B E(off)
50 Vdc, VBE(off)
Emitter Cutoff Current (V B e = 3.0 Vdc, Jc = 0)
ON CHARACTERISTICS
0.5 Vdc)
0.5 Vdc, Ta
150°C)
DC Current Gain
(Iq = 0.1 mAdc, Vqe = 10 Vdc)
c(l = 1.0 mAdc, Vqe = 10 Vdc)
OC = 10 mAdc, Vce = 10Vdc)(1)
c(l = 150 mAdc, Vce = 10 Vdc)(1)
c(l = 150 mAdc, Vce = 1-0Vdc)(1)
Collector-Emitter Saturation Voltaged) Oc = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltaged) Oc = 150 mAdc, Ib = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain
Bandwidth Product
Oc
=
20 mAdc, Vce
=
10
vdc
>
f
=
10 °
MHz
'
Output Capacitance
(VcB
=
10
vdc
-
E[
=
°- f
=
14° kHz)
Input Impedance
Oc
=
1-0 mAdc, Vce
=
1° vdc f
-
=
10 kHz)
Small-Signal Current Gain Oc = 1.0 mAdc, Vce = 10 vdc' f = 1.0 kHz)
Output Admittance Oc = 1.0 mAdc, Vce = 10 Vd c, f = 1-0 kHz)
Noise Figure
Oc = 100 (xAdc, Vce
10 Vdc, Rs = 1.0 kohm, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
v (BR)CEO
VCEOINL)*
V(BR)CBO
V(BR)EBO
'BEV
ICEV
lEBO
hFE
VCElsat)
VBE(sat)
fT
C bo
40
60
35
50
75
100
50
Vdc
Vdc
0.01
10
10
/iAdc
300
0.4
Vdc
MHz
8.0 pF
kohms
50 jim ho
8.0
Delay Time
Rise Time
(V C c
=
1° Vdc, V B E(off)
=
°
vdc
'
IC = 150 mAdc, Ibi = 15 mAdc)
40
Storage Time
Fall Time
(Vce = 10 Vdc, lc = 150 mAdc,
'B1 = 'B2 = 15 rnAdc)
250
90
(1) Pulse Test: Pulse Width =s 300 us, Duty Cycle « 2.0%.
t The highest value of collector supply voltage that may be safely used with a resistive load switching circuit in which the collector
current is 600 mAdc.
5-26
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